Cd4001bmcd4001bc quad 2input nor buffered b series gate. Cd4001bmcd4001bc quad 2input nor buffered b series gate cd4011bmcd4011bc quad 2input nand buffered b series gate physical dimensions inches millimeters ceramic dualinline package j order number cd4001bmj, cd4001bcj, cd40011bmj or cd4011bcj. Cd4001bmcd4001bc quad 2input nor buffered b series. Datasheet contains the design specifications for product development. Unused inputs must be connected to vdd, vss, or another input. Symbol 1n4001 1n4002 1n4003 1n4004 1n4005 1n4006 1n4007.
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C1 1n4001 1n4007 general purpose rectifiers absolute maximum ratings t a 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. T he outputs are fully buffered for the highest noise immunity and pattern insensitivity to output impedance. Recent listings manufacturer directory get instant insight into any electronic component. Q101 qualified and ppap capable these devices are pb. Nchannel logic level enhancement mode field effect transistor. For a complete range of 50, 75, 93, and 100 ohm coaxial, twinaxial, and triaxial cables, we offer a wide range of insulation and jacket materials meeting the requirements of military specifications and regulatory agencies such as ul and csa. Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to. Full datasheet ceb6030l manufactirer cet, power fets archive 1. Toshiba field effect transistor silicon n channel mos type mosv, k2698 pdf download toshiba, k2698 datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits. It operates over a recommended v dd power supply range of 3 v to 15 v referenced to v ss usually ground. Pulse lengths are determined by resistors and capacitors on the pcb and differ from sensor to sensor. All dimensions are nominal device package type package drawing pins spq length mm width mm height mm cd4001bm96 soic d 14 2500 367.
Free, halogen freebfr free and are rohs compliant maximum ratings rating symbol value unit. Where designed to be soldered at high temperatures, rohs products are. Ceb6030l datasheet, ceb6030l datasheets, ceb6030l pdf, ceb6030l circuit. Ti cmos hex buffersconverters,alldatasheet, datasheet, datasheet search site for. Cep7030lceb7030l 4 2 c, c a p a c i t a n c e p f i d, d r a i n c u r r e n t a ciss coss crss 3000 2500 2000 1500 10 00 5 00 0 0 5 10 15 20 25 i d, d r a i n c u r r e n t a r d s o n, n o r m a l i z e d r d s o n, o nr e s i s t a n c e o h m s vds, draintosource voltage v figure 1. Zener voltage vz the zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature tl at 30c 1c and 38 lead length. October 2009 doc id 12555 rev 3 19 9 2str1230 low voltage fastswitching npn power transistor features very low collectoremitter saturation voltage high current gain characteristic. Ordering information note 4 device packaging shipping. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Cep6030lceb6030l 4 100 c, c a p a c i t a n c e n p f i d, d r a i n c u r r e n t a ciss coss crss 1800 1500 1200 900 600 30 0 0 0 5 10 15 20 25 i d, d r a i n c u r r e n t a r d s o n, n o r m a l i z e d r d s o n o nr e s i s t a c e o h m s vds, draintosource voltage v figure 1.
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